smd type ic www.kexin.com.cn 1 smd type ic tssop-8 unit: mm dual p-channel 2.5v specified powertrench mosfet KDW2504P features -3.8 a, - 20 v. r ds(on) = 0.043 @v gs =-4.5v r ds(on) = 0.070 @v gs =-2.5v low gate charge high performance trench technology for extremely low r ds(on) extended vgss range ( 12v) for battery applications absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss -20 v gate to source voltage v gs 12 v drain current continuous (note 1a) -3.8 a drain current pulsed -30 a power dissipation for single operation (note 1a) 1 power dissipation for single operation (note 1b) 0.6 operating and storage temperature t j ,t stg -55to150 thermal resistance junction to ambient (note 1a) r ja 125 /w thermal resistance junction to ambient (note 1b) r ja 208 /w i d p d w
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d =-250 a -20 v breakdown voltage temperature coefficient i d =-250 a, referenced to 25 -16 mv/ zero gate voltage drain current i dss v ds =-16v,v gs =0v -1 a gate-body leakage, forward i gssf v gs =-12v,v ds = 0 v -100 na gate-body leakage, reverse i gssr v gs =12v,v ds = 0 v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d = -250 a -0.6 -1 -1.5 v gate threshold voltage temperature coefficient i d =-250 a, referenced to 25 3 mv/ v gs =-4.5 v, i d =-3.8 a 0.036 0.043 v gs =-2.5v,i d = -3.0 a 0.056 0.070 v gs =-4.5v,i d =-3.8 a,tj = 125 0.049 0.069 on-state drain current i d(on) v gs =-4.5v,v ds =-5v -15 a forward transconductance g fs v ds =-5v,i d = -3.5a 13.2 s input capacitance c iss 1015 pf output capacitance c oss 446 pf reverse transfer capacitance c rss 118 pf turn-on delay time t d(on) 11 20 ns turn-on rise time tr 18 32 ns turn-off delay time t d(off) 34 55 ns turn-off fall time t f 34 55 ns total gate charge v gs =5v q g 9.7 16 nc gate-source charge q gs 2.2 nc gate-drain charge q gd 2.4 nc maximum continuous drain-source diode forward current i s -0.83 a drain-source diode forward voltage v sd v gs =0v,i s =- 0.83 a (note 2) -0.7 -1.2 v notes: 1r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja is 125 /w (steady state) when mounted o na1inch 2 copper pad on fr-4. b) r ja is 208 /w (steady state) when mounted on a minimum copper pad on fr-4. 2. pulse test: pulse width 300 s, duty cycle 2.0% v ds =-5v,i d =-3.8a,v gs =- 4.5v(note 2) r ds(on) static drain-source on-resistance v dd =-5v,i d =-1a,v gs =-4.5v, r gen =6 v ds =-10v,v gs =0v,f=1.0mhz KDW2504P
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